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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| BCW66KG-E6433 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | - | |||||
| BCW60FNE6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | - | |||||
| AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
| BCW61AE6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | - | |||||
| BCW60FFE6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | - | |||||
| BCW68GE6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon | - | |||||
| BCW61DE6433 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | - | |||||
| BCW68HE6433 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon | - | |||||
| BCW67BE6433 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | - | |||||
| BCW60C | Infineon Technologies AG | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, ROHS COMPLIANT PACKAGE-3 | - | |||||
| BCW61C | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236, ROHS COMPLIANT PACKAGE-3 | - | |||||
| BCW60 | Infineon Technologies AG | Transistor | - | |||||
| BCW60A | Infineon Technologies AG | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, SOT-23, 3 PIN | - | |||||
| BCW66KH-E6433 | Infineon Technologies AG | Transistor | - | |||||
| BCW60FN | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SOT-23, 3 PIN | - | |||||
| BCW60FNE6433 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | - | |||||
| BCW67BE6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | - | |||||
| BCW66KHB6327HTLA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | - | |||||
| BCW68HE6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, | ￥2.0264 | |||||
| BCW65B | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SOT-23, 3 PIN | - | |||||
| BCW66KF-E6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.8A I(C), NPN | - | |||||
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